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DESilicon carbide emission spectrum
Silicon carbide emission spectrum, Total:66 items.
In the international standard classification, Silicon carbide emission spectrum involves: Analytical chemistry, Non-ferrous metals, Construction materials, Ferrous metals, Ferroalloys, Ceramics, Testing of metals, Semiconducting materials, Telecommunications in general, Inorganic chemicals, Water quality, Refractories.
Group Standards of the People's Republic of China, Silicon carbide emission spectrum
- T/SCS 000012-2021 Determination of trace elements in boron carbide–silicon carbide pellets by Inductively coupled plasma optical emission spectrometry
- T/SAS 0008-2020 lightweight silicon carbide mirror
- T/SAS 0009-2020 lightweight silicon carbide mirror blanks
- T/QAS 040-2021 Determination of silicon brine by inductively coupled plasma emission spectrometry
- T/CBMF 101-2021 Methods for chemical analysis of carbonate rocks—Inductively coupled plasma atomic emission spectrometry method
Association Francaise de Normalisation, Silicon carbide emission spectrum
- NF A07-520:1971 Analysis of aluminium silicon and aluminium-silicon-copper alloys by emission spectrography.
Korean Agency for Technology and Standards (KATS), Silicon carbide emission spectrum
- KS D 1658-2021 Emission-spectroscopic analysis for carbon steel and low alloy steel
- KS D 1658-1993 Emission-spectroscopic analysis for carbon steel and low alloy steel
- KS D 1658-2003(2016) Emission-spectroscopic analysis for carbon steel and low alloy steel
- KS D 1658-2003 Emission-spectroscopic analysis for carbon steel and low alloy steel
- KS L 8011-2002 Silicon carbide electric heating element
- KS D 2086-1993 Methods for emission spectrochemical analysis of titanium
- KS D 1681-1993 Method for emission spectrochemical analysis of aluminium ingot
- KS D 2518-2015(2020) Methods for photoelectric emission spectrochemical analysis of cadmium metal
- KS D 1681-2018 Method for emission spectrochemical analysis of aluminium ingot
- KS D 1683-1993 Method for emission spectrochemical analysis of silver ingot
- KS M 0032-2009(2019) General rules for ICP emission spectrochemical analysis
- KS D 1657-1981 Analysis method of photoelectric emission spectrochemical analysis of metal materials
- KS D 2518-2020 Methods for photoelectric emission spectrochemical analysis of cadmium metal
- KS D 1650-1993 General rules for photoelectric emission spectrochemical analysis of metal materials
- KS E 3076-2022 Methods for X-ray fluorescence spectrometric analysis of silica stone and silica sand
- KS D 1670-1987 Non-ferrous metal of Methods for emission spectrochemical analysis
- KS E 3076-2017 Methods for X－ray fluorescence spectrometric analysis of silica stone and silica sand
- KS D 1929-2019 Methods for photoelectric emission spectrochemical analysis of die casting zinc alloys
- KS M 0032-2019 General rules for ICP emission spectrochemical analysis
- KS D 1660-1987 General rules for testing Emission spectrochemical of metal materials
- KS D 1899-2019 Methods for photoelectric emission spectrochemical analysis of electrolytic cathode copper
- KS D 1685-1993 Methods for emission spectrochemical analysis of zinc metal
- KS D 1929-2004 Methods for photoelectric emission spectrochemical analysis of die casting zinc alloys
Professional Standard - Commodity Inspection, Silicon carbide emission spectrum
- SN/T 2489-2010 Determination of Cr、Mn、P、Si contents in pig-irons-Photoelectric emission spectroscopic method
- SN/T 2260-2010 Determination chemical compounds of copper cathode-Photoeletric emission spectroscopic method
KR-KS, Silicon carbide emission spectrum
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon carbide emission spectrum
- GB/T 42794-2023 Determination of nickel iron carbon, sulfur, silicon, phosphorus, nickel, cobalt, chromium and copper content by spark source atomic emission spectrometry
- GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
- GB/T 30656-2023 Silicon carbide single crystal polished wafer
- GB/T 42902-2023 Laser Scattering Method for Testing Surface Defects of Silicon Carbide Epitaxial Wafers
- GB/T 43612-2023 Silicon carbide crystal material defect map
- GB/T 2590.8-1981 Zirconium oxide--Determination of hafnium oxide content--Emission spectrophotometric method
Professional Standard - Electron, Silicon carbide emission spectrum
- SJ 3198-1989 Method for determination of Silicon,Iron,Magnesium and Copper in vacuum Silicon-Aluminium alloy by emission spectrum
National Metrological Verification Regulations of the People's Republic of China, Silicon carbide emission spectrum
RU-GOST R, Silicon carbide emission spectrum
- GOST 8776-2010 Cobalt. Methods of chemical-atomic-emission spectral analysis
- GOST 6012-1978 Nickel. Methods of chemical-atomic-emission spectral analysis
- GOST 6012-2011 Nickel. Methods of chemical-atomic-emission spectral analysis
Japanese Industrial Standards Committee (JISC), Silicon carbide emission spectrum
- JIS G 1252:1975 Emission-spectroscopic analysis for carbon steel and low alloy steel
- JIS H 1123:1995 Method for photoelectric emission spectrochemical analysis of lead metal
- JIS H 1303:1976 Method for emission spectrochemical analysis of aluminium ingot
- JIS H 1322:1976 Method for emission spectrochemical analysis of magnesium ingot
- JIS H 1163:1991 Method for photoelectric emission spectrochemical analysis of cadmium metal
- JIS H 1113:2022 Method for photoelectric emission spectrochemical analysis of zinc metal
- JIS H 1560:2016 Method for photoelectric emission spectrochemical analysis of die casting zinc alloys
- JIS H 1103:1995 Method for photoelectric emission spectrochemical analysis of electrolytic cathode copper
GOST, Silicon carbide emission spectrum
- GOST 6012-1998 Nickel. Methods of chemical-atomic-emission spectral analysis
International Telecommunication Union (ITU), Silicon carbide emission spectrum
ITU-R - International Telecommunication Union/ITU Radiocommunication Sector, Silicon carbide emission spectrum
British Standards Institution (BSI), Silicon carbide emission spectrum
- BS EN 15979:2011 Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
- 24/30478129 DC BS EN 15979 Testing of ceramic raw materials and ceramic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by optical emission spectrometry by direct current arc excitation (DCArc-OES)
German Institute for Standardization, Silicon carbide emission spectrum
- DIN 51088:2007 Testing of ceramic raw and basic materials - Determination of mass fractions of metallic trace impurities in silicon carbide powders and granular silicon carbides by optical emission spectrometry and excitation in the DC arc
Professional Standard - Non-ferrous Metal, Silicon carbide emission spectrum
- YS/T 568.8-2006 Determination of the amount of hafnium oxide in zirconia (emission spectrometry)
European Committee for Standardization (CEN), Silicon carbide emission spectrum
- EN 15979:2011 Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation
SCC, Silicon carbide emission spectrum
- NS-EN ISO 21068-2:2024 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, fr...
International Organization for Standardization (ISO), Silicon carbide emission spectrum
- ISO/DIS 21068-2 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free